IXXN110N65C4H1 - Littelfuse

RoHS: RoHS Compliant

Product: IGBT Silicon Modules

Configuration: Single Dual Emitter

Emitter Voltage VCEO Max: 650 V

Emitter Saturation Voltage: 1.98 V

Gate-Emitter Leakage : 100 nA

Pd - Power Dissipation: 750 W

Package/Case: SOT-227B-4

Min Operating Temp.: - 55 C

Max Operating Temp.: + 175 C

Packaging: Tube