IXFH52N30P - Littelfuse
RoHS: RoHS Compliant
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Rds On - Drain-Source Resistance: 73 mOhms
Vgs - Gate-Source Voltage: - 20 V
Vgs - Gate-Source Voltage: + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 110 nC
Min Operating Temperature: - 55 C
Max Operating Temperature: + 150 C
Pd - Power Dissipation: 400 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube