IXFH12N100P - Littelfuse

RoHS: RoHS Compliant

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1 kV

Rds On - Drain-Source Resistance: 1.05 Ohms

Vgs - Gate-Source Voltage: - 20 V

Vgs - Gate-Source Voltage: + 20 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V

Qg - Gate Charge: 80 nC

Min Operating Temperature: - 55 C

Max Operating Temperature: + 150 C

Pd - Power Dissipation: 463 W

Channel Mode: Enhancement

Tradename: HiPerFET

Packaging: Tube