IXFA7N100P - Littelfuse
RoHS: RoHS Compliant By Exemption
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-263-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Rds On - Drain-Source Resistance: 1.9 Ohms
Vgs - Gate-Source Voltage: - 30 V
Vgs - Gate-Source Voltage: + 30 V
Vgs th - Gate-Source Threshold Voltage: 6 V
Qg - Gate Charge: 47 nC
Min Operating Temperature: - 55 C
Max Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube